WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE

Invention Grant

EP1961036B1 WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE 有权

Title translation: 密封粘结对于随着金属合金晶片级

Patent Title: WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE
Patent Title (中): 密封粘结对于随着金属合金晶片级
Application No.: EP06844592.3

Application Date: 2006-11-29
Publication No.: EP1961036B1

Publication Date: 2016-07-20
Inventor: CARLSON, Gregory, A. , ERLACH, David, M. , PARANJPYE, Alok , SUMMERS, Jeffery, F.
Applicant: Innovative Micro Technology
Applicant Address: 75 Robin Hill Road Goleta, CA 93117 US
Assignee: Innovative Micro Technology
Current Assignee: Innovative Micro Technology
Current Assignee Address: 75 Robin Hill Road Goleta, CA 93117 US
Agency: Kisters, Michael Marcus
Priority: US304601 20051216
International Announcement: WO2007078472 20070712
Main IPC: H01L21/00
IPC: H01L21/00 ; B81C1/00 ; H01L23/10

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备