A capacitor for an integrated circuit, eg a DRAM comprises a conductive plug 7 with sidewalls formed form layers of TiN and or Ti, 3, 5. An electrode material 9 which does not comprise Ti or TiN is coated over the conductive plug 7, prior to the formation of the dielectric layer 11 and the upper electrode 13. Preferably, the electrode material 9 comprises tungsten, and the dielectric layer 11 is tantalum pentoxide. The arrangement eliminates contact between the dielectric 11 and the titanium containing layers 5, 3 resulting in a lower leakage current for the device.