An EEPROM cell with improved current performance, the EEPROM cell having: a selection transistor with a drain region, a source region and a control gate, a memory cell having a drain region, a source region, a control gate and a floating gate, the drain region of the memory cell and said source region of the selection transistor are connected together, and the source and drain regions of the memory cell and the source and drain regions of the selection transistor share an active area with a pair of sides that linearly converge from one end to the other end