Invention Grant
- Patent Title: Measurement system and measurement method
-
Application No.: US15305740Application Date: 2015-04-21
-
Publication No.: US10002743B2Publication Date: 2018-06-19
- Inventor: Shoji Hotta , Hiroki Kawada , Osamu Inoue
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-090858 20140425
- International Application: PCT/JP2015/062062 WO 20150421
- International Announcement: WO2015/163307 WO 20151029
- Main IPC: H01J37/28
- IPC: H01J37/28 ; G03F9/00 ; G01B15/04 ; H01J37/22 ; G03F7/20

Abstract:
For scanning electron beams and measuring overlay misalignment between an upper layer pattern and a lower layer pattern with high precision, electron beams are scanned over a region including a first pattern and a second pattern of a sample, the sample having the lower layer pattern (the first pattern) and the upper layer pattern (the second pattern) formed in a step after a step of forming the first pattern. The electron beams are scanned such that scan directions and scan sequences of the electron beams become axial symmetrical or point-symmetrical in a plurality of pattern position measurement regions defined within the scan region for the electron beams, thereby reducing measurement errors resulting from the asymmetry of electric charge.
Public/Granted literature
- US20170047197A1 MEASUREMENT SYSTEM AND MEASUREMENT METHOD Public/Granted day:2017-02-16
Information query