Invention Grant
- Patent Title: Process based metrology target design
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Application No.: US14941347Application Date: 2015-11-13
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Publication No.: US10007744B2Publication Date: 2018-06-26
- Inventor: Guangqing Chen , Shufeng Bai , Eric Richard Kent , Yen-Wen Lu , Paul Anthony Tuffy , Jen-Shiang Wang , Youping Zhang , Gertjan Zwartjes , Jan Wouter Bijlsma
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/00 ; G03F7/20 ; G06F17/12 ; G06F17/14

Abstract:
Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
Public/Granted literature
- US20160140267A1 PROCESS BASED METROLOGY TARGET DESIGN Public/Granted day:2016-05-19
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