Invention Grant
- Patent Title: Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same
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Application No.: US15726673Application Date: 2017-10-06
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Publication No.: US10008634B2Publication Date: 2018-06-26
- Inventor: Yi-Fan Li , Jing-En Huang , Sie-Jhan Wu
- Applicant: GENESIS PHOTONICS INC.
- Applicant Address: TW Tainan
- Assignee: GENESIS PHOTONICS INC.
- Current Assignee: GENESIS PHOTONICS INC.
- Current Assignee Address: TW Tainan
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW103135236A 20141009
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/22 ; H01L33/00 ; H01L33/06

Abstract:
A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.
Public/Granted literature
- US20180033914A1 THIN-FILM FLIP-CHIP LIGHT EMITTING DIODE HAVING ROUGHENING SURFACE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-02-01
Information query
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