Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15019783Application Date: 2016-02-09
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Publication No.: US10014250B2Publication Date: 2018-07-03
- Inventor: Sheng-Chi Hsieh , Chih-Pin Hung
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F5/00 ; H01F17/00 ; H01L23/522 ; H01L23/498

Abstract:
A semiconductor device includes a substrate and at least one inductor on the substrate. The inductor includes top portions separated from one another, bottom portions separated from one another, and side portions separated from one other. Each side portion extends between one of the top portions and one of the bottom portions. A semiconductor device includes a substrate, a first patterned conductive layer on the substrate, a second patterned conductive layer, and at least one dielectric layer between the first patterned conductive layer and the second patterned conductive layer. The first patterned conductive layer defines bottom crossbars separated from each other, each bottom crossbar including a bend angle. The second patterned conductive layer defines top crossbars separated from each other, wherein each top crossbar is electrically connected to a bottom crossbar.
Public/Granted literature
- US20170229393A1 SEMICONDUCTOR DEVICES Public/Granted day:2017-08-10
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