- Patent Title: Semiconductor device with extended electrically-safe operating area
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Application No.: US15596925Application Date: 2017-05-16
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Publication No.: US10014405B1Publication Date: 2018-07-03
- Inventor: Xiaoju Wu
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/49 ; H01L29/66 ; H01L21/266
Abstract:
In at least some embodiments, a semiconductor device comprises a source region is formed within a well. The source region comprises a first dopant type, and the well comprises a second dopant type opposite the first dopant type. A termination region is formed within the well, the termination region being aligned with the source region and having an end adjacent to and spaced apart from an end of the source region. The termination region comprises a semiconducting material having the second dopant type. A preselected concentration value of the dopant in the termination region is greater than a concentration value of the second dopant type in the well.
Public/Granted literature
- US20180190813A1 SEMICONDUCTOR DEVICE WITH EXTENDED ELECTRICALLY-SAFE OPERATING AREA Public/Granted day:2018-07-05
Information query
IPC分类:
