Invention Grant
- Patent Title: Light-emitting device
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Application No.: US14579807Application Date: 2014-12-22
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Publication No.: US10014441B2Publication Date: 2018-07-03
- Inventor: Shih-I Chen , Wei-Yu Chen , Yi-Ming Chen , Ching-Pei Lin , Tsung-Xian Lee
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: TW101111652A 20120330
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/42 ; H01L33/38

Abstract:
Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.
Public/Granted literature
- US20150155444A1 LIGHT-EMITTING DEVICE Public/Granted day:2015-06-04
Information query
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