Invention Grant
- Patent Title: Magnetic capacitor structures
-
Application No.: US14737152Application Date: 2015-06-11
-
Publication No.: US10026551B2Publication Date: 2018-07-17
- Inventor: Cho-Fan Hsieh , Chih-Hua Chen , Hung-Sen Wu , Teng-Chun Wu , Ming-Han Liao
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW103145160A 20141224
- Main IPC: H01G4/008
- IPC: H01G4/008 ; H01G4/10 ; H01G4/01 ; H01G4/33 ; H01L49/02 ; H01G4/12

Abstract:
The present disclosure provides a magnetic capacitor structure including a first electrode, a second electrode opposite to the first electrode, a dielectric layer disposed between the first electrode and the second electrode, a first magnetic layer disposed between the first electrode and the dielectric layer, a second magnetic layer disposed between the second electrode and the dielectric layer, a first oxide layer disposed between the first electrode and the first magnetic layer, and a second oxide layer disposed between the second magnetic layer and the dielectric layer.
Public/Granted literature
- US20150371777A1 MAGNETIC CAPACITOR STRUCTURES Public/Granted day:2015-12-24
Information query