Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15095154Application Date: 2016-04-10
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Publication No.: US10026827B2Publication Date: 2018-07-17
- Inventor: Zhen Wu , Chiu-Hsien Yeh , Po-Wen Su , Kuan-Ying Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/304 ; H01L21/768 ; H01L21/28
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first organic layer on the substrate; patterning the first organic layer to form an opening; forming a second organic layer in the opening; and removing the first organic layer to form a patterned second organic layer on the substrate.
Public/Granted literature
- US20170294523A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-10-12
Information query
IPC分类:
