Invention Grant
- Patent Title: Circuit and method for driving a power semiconductor switch
-
Application No.: US14737541Application Date: 2015-06-12
-
Publication No.: US10033370B2Publication Date: 2018-07-24
- Inventor: Christian Jaeger , Johannes Georg Laven
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014108451 20140616
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/14 ; H03K17/082 ; H03K17/567 ; H03K17/687

Abstract:
A drive circuit for driving a semiconductor switch includes an overload detector circuit connected to the semiconductor switch and designed to detect an overload state of the semiconductor switch. The drive circuit further includes a driver circuit connected to a control terminal of the semiconductor switch and designed to generate, upon detection of an overload state, a driver signal having a level such that the semiconductor switch is switched off or switch-on is prevented. The driver circuit is further designed to generate a driver signal for driving the semiconductor switch according to a control signal, wherein for switching on the transistor at a first instant a driver signal is generated at a first level and, if no overload state is detected up to a predefined time period having elapsed, the level of the driver signal is increased to a second level.
Public/Granted literature
- US20150365083A1 CIRCUIT AND METHOD FOR DRIVING A POWER SEMICONDUCTOR SWITCH Public/Granted day:2015-12-17
Information query