Invention Grant
- Patent Title: Power semiconductor element driving circuit
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Application No.: US15303149Application Date: 2015-05-27
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Publication No.: US10038438B2Publication Date: 2018-07-31
- Inventor: Kosuke Nakano , Keisuke Iwasawa , Takayoshi Miki , Hiroshi Nakatake
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-112004 20140530
- International Application: PCT/JP2015/065257 WO 20150527
- International Announcement: WO2015/182658 WO 20151203
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/567 ; H02M1/00 ; H02M1/08 ; H02M7/48 ; H01L29/16 ; H01L29/20 ; H03K17/0812 ; H02M1/32 ; H02M7/5387

Abstract:
A driving circuit including: a voltage detector that detects the sum voltage of a positive bias voltage and a negative bias voltage, the negative bias voltage or the positive bias voltage; and a switching element that is connected to the control terminal of a power element and the negative side of a negative-voltage power supply; wherein, when the value of the detection target voltage becomes lower than a voltage setting value or when a voltage between the control terminal and the reference terminal in the power element increases in a state where the value of the detection target voltage is lower than the voltage setting value, the voltage detector turns on the switching element to thereby supply, between the above terminals in the power element, a voltage of 0V or lower.
Public/Granted literature
- US20170040992A1 POWER-SEMICONDUCTOR ELEMENT DRIVING CIRCUIT Public/Granted day:2017-02-09
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