Invention Grant
- Patent Title: Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
-
Application No.: US15457088Application Date: 2017-03-13
-
Publication No.: US10050174B2Publication Date: 2018-08-14
- Inventor: Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: Labatt, LLC
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32 ; H01L33/22 ; H01L33/00 ; H01L33/40 ; H01S5/125 ; H01S5/30 ; H01S5/343

Abstract:
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
Public/Granted literature
- US20170186910A1 Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer Public/Granted day:2017-06-29
Information query
IPC分类: