公开(公告)号：US20210343898A1

公开(公告)日：2021-11-04

申请号：US17372963

申请日：2021-07-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/12 ,  H01L33/00 ,  H01L33/62

Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

公开(公告)号：US20210202791A1

公开(公告)日：2021-07-01

申请号：US17198491

申请日：2021-03-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Michael Shur

IPC: H01L33/00 ,  H01L33/06 ,  H01S5/32 ,  H01L21/683 ,  H01S5/343 ,  H01L33/32 ,  H01L33/02 ,  H01L21/02

Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

公开(公告)号：US20210028325A1

公开(公告)日：2021-01-28

申请号：US17060954

申请日：2020-10-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/00 ,  H01L33/32 ,  H01L31/0352 ,  H01L33/14 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/02 ,  H01L31/109 ,  H01L33/04

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

公开(公告)号：US10881755B2

公开(公告)日：2021-01-05

申请号：US16236870

申请日：2018-12-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: A61L2/24 ,  A61L2/10 ,  G01N21/88 ,  G01N21/64 ,  G01N21/94 ,  G01N33/02 ,  A23B7/015 ,  A23L3/28

Abstract: Ultraviolet illumination with optical elements to irradiate objects and/or fluid for purposes of sterilization, disinfection, and/or cleaning. The objects and/or fluid can be irradiated using an ultraviolet illuminator having at least one ultraviolet light emitting source. An ultraviolet transparent housing encapsulates the at least one ultraviolet light emitting source. The ultraviolet transparent housing includes an ultraviolet transparent material that emits ultraviolet light from the at least one ultraviolet light emitting source while preventing humidity from penetrating the ultraviolet transparent housing and damaging the at least one ultraviolet light emitting source. At least one ultraviolet transparent optical element is located about the ultraviolet transparent housing interspersed with the ultraviolet transparent material.

公开(公告)号：US10751663B2

公开(公告)日：2020-08-25

申请号：US15997896

申请日：2018-06-05

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov

IPC: B01D53/00 ,  B01D53/56 ,  B01D53/72 ,  B01D53/86 ,  F02M25/12 ,  F02M27/06 ,  B01D53/94 ,  B01J19/12

Abstract: A system for providing ultraviolet treatment of volatile organic compounds (VOCs) is disclosed. The system can include a first gas conduit to carry a stream of gas having VOCs and a second gas conduit to carry a second stream of gas containing a partial pressure of water vapor. A gas treatment unit can be coupled to the first gas conduit and the second gas conduit. The gas treatment unit can form hydroxyl radicals from the water vapor in the stream of gas carried by the second gas conduit and inject the radicals in the first gas conduit to decrease the presence of the VOCs. The gas treatment unit can include a photocatalyst component and at least one ultraviolet radiation source to irradiate the photocatalyst component with ultraviolet radiation. To this extent, the irradiated photocatalyst component disassociates the gas containing the water vapor to form the hydroxyl radicals.

公开(公告)号：US10454006B2

公开(公告)日：2019-10-22

申请号：US15241425

申请日：2016-08-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L21/02 ,  H01L33/38 ,  H01L33/58 ,  C25D11/04 ,  C25D11/24 ,  C25D11/16 ,  C30B25/04 ,  H01L33/32 ,  H01L33/00 ,  H01L33/42 ,  H01L33/40 ,  H01L33/12 ,  H01L33/44 ,  H01L33/14

Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

公开(公告)号：US20190305172A1

公开(公告)日：2019-10-03

申请号：US16442990

申请日：2019-06-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/32 ,  H01L31/0352 ,  H01L33/14 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/02 ,  H01L31/109

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US10319881B2

公开(公告)日：2019-06-11

申请号：US15390575

申请日：2016-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/62 ,  G06F17/50 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

公开(公告)号：US20190162381A1

公开(公告)日：2019-05-30

申请号：US16205960

申请日：2018-11-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Faris Mills Morrison Estes ,  Alexander Dobrinsky ,  Maxim S. Shatalov

IPC: F21S41/64 ,  F21S41/43 ,  F21S41/37 ,  F21V9/06 ,  F21S41/17

Abstract: An approach for providing illumination with a blue UV light source, which can be used in combination with a visible light source is disclosed. In operation, the visible light source emits visible light at a first intensity. The blue UV light source emits blue UV light at a second intensity. The blue UV light stimulates fluorescence from a surface of an object illuminated by the blue UV light. A sensor can detect the intensity of the fluorescence from the surface illuminated by the blue UV light source. A control module can be operatively coupled to the visible light source, the blue UV light source, and the at least one sensor, and be configured to change the intensity of the visible light and/or the intensity of the blue UV light as a function of the fluorescent intensity detected by the sensor.

公开(公告)号：US10297460B2

公开(公告)日：2019-05-21

申请号：US15496887

申请日：2017-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/15 ,  H01L31/0256 ,  H01L21/308 ,  H01L29/66 ,  H01L21/02 ,  H01L33/12 ,  H01L29/20 ,  H01L33/00

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.