Invention Grant
- Patent Title: Method of cleaning plasma processing apparatus
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Application No.: US14635978Application Date: 2015-03-02
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Publication No.: US10053773B2Publication Date: 2018-08-21
- Inventor: Hiroki Kishi , Mitsuru Hashimoto , Keiichi Shimoda , Eiichi Nishimura , Akitaka Shimizu
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-040524 20140303
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/32 ; C23C16/44 ; H01J37/305 ; H01J37/32
Abstract:
There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
Public/Granted literature
- US20150247235A1 METHOD OF CLEANING PLASMA PROCESSING APPARATUS Public/Granted day:2015-09-03
Information query
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