公开(公告)号：US20250140512A1

公开(公告)日：2025-05-01

申请号：US18681776

申请日：2022-09-09

Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD.

Inventor： Huaidong ZHANG ,  Yaoyao ZHANG ,  Dongdong HU ,  Chaoquan YANG ,  Shiran CHENG ,  Xiang YU ,  Xiaoli SHI ,  Kaidong XU

IPC: H01J37/20 ,  H01J37/244 ,  H01J37/305

Abstract: An ion beam etching machine and a lower electrode structure thereof. The lower electrode structure comprises an electrode plate, a ring pressing mechanism, and a lifting mechanism, the ring pressing mechanism being configured to support a member to be etched, and the lifting mechanism being configured to drive the ring pressing mechanism to ascend and descend relative to the electrode plate; and same further comprises a position measurement mechanism for measuring a position to which the ring pressing mechanism descends relative to the electrode plate. The lifting mechanism is configured to stop driving the ring pressing mechanism to descend based on measurement information fed back by the position measurement mechanism. The arrangement of the lower electrode structure can avoid fragmenting of the member to be etched, and improve the product yield.

公开(公告)号：US12269092B2

公开(公告)日：2025-04-08

申请号：US17296590

申请日：2019-03-01

Applicant: Arcam AB

Inventor： Safdar Ali ,  Kristofer Karlsson

IPC: B22F10/85 ,  B22F10/28 ,  B22F10/368 ,  B22F12/41 ,  B22F12/44 ,  B33Y10/00 ,  H01J37/09 ,  H01J37/21 ,  H01J37/305 ,  B22F12/00 ,  B22F12/49 ,  B33Y30/00 ,  B33Y50/02

Abstract: An apparatus for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together with an electron beam from an electron beam source so as to form the article according to a computer model thereof. The apparatus includes a chamber a chamber having a first section and a second section openly connected to each other. The first section is configured to receive the individual layers of powder material. The second section comprising an electron beam source, an electromagnetic focus coil having an axially extending, and a reflector coil. The electron beam source is configured to emit an electron beam to fuse the individual layers of powder material. The reflector coil is arranged radially outside the electromagnetic focus coil. The direction of windings of the reflector coil is opposite a direction of windings of the electromagnetic focus coil.

公开(公告)号：US20250104963A1

公开(公告)日：2025-03-27

申请号：US18897888

申请日：2024-09-26

Applicant: Carl Zeiss SMT GmbH

Inventor： Thomas Korb ,  Hyun Hwa Kim ,  Dmitry Klochkov

IPC: H01J37/30 ,  H01J37/305

Abstract: A method for operating an ion beam device comprises determining an incidence angle at which an ion beam of the ion beam device hits an upper top surface of a semiconductor sample and a rotation angle for the semiconductor sample around a rotation axis extending perpendicular to the upper top surface. The method also includes rotating the semiconductor sample around the rotation axis by the rotation angle. The method further includes determining a scan angle between an adapted scan line along which the ion beam is moved when hitting the upper top surface and a default scan line of the ion beam extending parallel to the upper top surface of the semiconductor sample. Determining the scan angle is based on the rotation angle and the incidence angle. The scan line is adapted to the adapted scan line based on the determined scan angle.

公开(公告)号：US20250096006A1

公开(公告)日：2025-03-20

申请号：US18964049

申请日：2024-11-29

Applicant: Tokyo Electron Limited

Inventor： Rin SASAKI ,  Masanori HOSOYA ,  Yuki CHIBA ,  Shun ITOH ,  Daisuke NISHIDE ,  Takatoshi ORUI ,  Yuto SAITO

IPC: H01L21/311 ,  H01J37/305 ,  H01J37/32

Abstract: A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).

公开(公告)号：US20250095959A1

公开(公告)日：2025-03-20

申请号：US18369967

申请日：2023-09-19

Applicant: FEI Company

Inventor： Chad Rue ,  Lilly Landers ,  Jason Arjavac ,  Gavin Mitchson

IPC: H01J37/305

Abstract: Methods include conditioning at least a portion of a gas delivery system with a carbon-based conditioning agent to provide a carbon-based residual, and etching a substrate with a focused ion beam, in the presence of an ammonia-based delayering agent provided by the gas delivery system and in the presence of the carbon-based residual, wherein the carbon-based residual reduces a topographical variation of a depth of the etching. Apparatus include a focused ion beam system configured to deliver a focused ion beam to a sample, and a pre-conditioned gas delivery system configured to deliver an ammonia-based delayering agent to the sample at least while the focused ion beam is being delivered to the sample, wherein the pre-conditioned gas delivery system includes a carbon-based residual in the gas delivery system, wherein a portion of the carbon-based residual is present at the sample during the etching of the sample with the ammonia-based delayering agent.

公开(公告)号：US12230471B2

公开(公告)日：2025-02-18

申请号：US17788556

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Aida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Hitoshi Kamoshida

IPC: H01J37/24 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30 ,  H01J37/305

Abstract: There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.
The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

公开(公告)号：US12176180B2

公开(公告)日：2024-12-24

申请号：US17773433

申请日：2019-11-20

Applicant: Hitachi High-Tech Corporation

Inventor： Atsushi Sawada ,  Tsunenori Nomaguchi

IPC: H01J37/20 ,  H01J37/26 ,  H01J37/30 ,  H01J37/305

Abstract: A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.

公开(公告)号：US12106935B2

公开(公告)日：2024-10-01

申请号：US18139184

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  G02B6/136 ,  H01J37/12 ,  H01J37/147 ,  H01J37/20 ,  G02B6/12

CPC classification number: H01J37/3053 ,  G02B6/136 ,  H01J37/12 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3056 ,  G02B2006/12107 ,  H01J2237/1507 ,  H01J2237/3174

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

公开(公告)号：US20240321548A1

公开(公告)日：2024-09-26

申请号：US18187700

申请日：2023-03-22

Applicant: NUVOTON TECHNOLOGY CORPORATION

Inventor： Yuval Kirschner

IPC: H01J37/305 ,  H01J37/30 ,  H01J37/304

CPC classification number: H01J37/3056 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An Integrated Circuit (IC), designed for debugging by Focused Ion Beam (FIB) editing, includes functional circuitry, a network of Basic FIB elements (BFEs), and routing circuitry. The functional circuitry includes functional nodes. Each of the BFEs includes a respective metal pad configured to be connected to one of the functional nodes using FIB editing. The routing circuitry is configured to route one or more selected BFEs for analysis.

公开(公告)号：US20240274397A1

公开(公告)日：2024-08-15

申请号：US18509372

申请日：2023-11-15

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Sebastian Schaedler

IPC: H01J37/147 ,  H01J37/302 ,  H01J37/305

CPC classification number: H01J37/1474 ,  H01J37/3023 ,  H01J37/3053

Abstract: Operating a particle beam apparatus includes processing, imaging, and/or analyzing an object. When guiding the particle beam along first dwell regions of a first scan line, the particle beam remains at each of the first dwell regions for a first dwell time. When guiding the particle beam along second dwell regions of a second scan line, the particle beam remains at each of the second dwell regions for a second dwell time. The first dwell time is shorter than the second dwell time. Alternatively, a first region of the first dwell regions has a first spacing with respect to a closest arranged adjacent second region of the first dwell regions. A first region of the second dwell regions has a second spacing with respect to a closest arranged adjacent second region of the second dwell regions. The second spacing is smaller than the first spacing.