Invention Grant
- Patent Title: Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer
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Application No.: US15134693Application Date: 2016-04-21
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Publication No.: US10079144B2Publication Date: 2018-09-18
- Inventor: Haeryong Kim , Hyeonjin Shin , Seongjun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0064899 20150508
- Main IPC: C01B17/00
- IPC: C01B17/00 ; H01L21/02 ; C23C16/56 ; C09D1/00 ; H01L29/423 ; C23C16/30 ; H01L29/786
Abstract:
Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c [Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M′kX2 [Formula 2] wherein, in Formula 2, M′ and X are the same as defined in the detailed description.
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