Invention Grant
- Patent Title: Fabrication of vertical field effect transistor structure with controlled gate length
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Application No.: US15439575Application Date: 2017-02-22
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Publication No.: US10079292B2Publication Date: 2018-09-18
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/3065 ; H01L21/308 ; H01L29/51 ; H01L29/49
Abstract:
A method of forming a gate structure, including forming one or more vertical fins on a substrate; forming a bottom spacer on the substrate surface adjacent to the one or more vertical fins; forming a gate structure on at least a portion of the sidewalls of the one or more vertical fins; forming a gauge layer on at least a portion of the bottom spacer, wherein the gauge layer covers at least a portion of the gate structure on the sidewalls of the one or more vertical fins; and removing a portion of the gauge layer on the bottom spacer.
Public/Granted literature
- US20170288039A1 FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH Public/Granted day:2017-10-05
Information query
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