Invention Grant
- Patent Title: Light emitting device and electronic device having an embedded pixel electrode
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Application No.: US14511742Application Date: 2014-10-10
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Publication No.: US10079330B2Publication Date: 2018-09-18
- Inventor: Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-180781 20080710
- Main IPC: H01L33/56
- IPC: H01L33/56 ; H01L33/44 ; H01L51/00 ; H01L51/52 ; H01L51/56

Abstract:
An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
Public/Granted literature
- US20150060890A1 Light Emitting Device and Electronic Device Public/Granted day:2015-03-05
Information query
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