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1.发明授权公开(公告)号：US12288799B2
公开(公告)日：2025-04-29
申请号：US18224152
申请日：2023-07-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Koji Kusunoki , Shingo Eguchi , Takayuki Ikeda
IPC: H01L27/15 , H01L29/66 , H01L29/786 , H01L33/50 , H01L33/62
Abstract: One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.
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公开(公告)号：US12272700B2
公开(公告)日：2025-04-08
申请号：US17948519
申请日：2022-09-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Koji Kusunoki , Shingo Eguchi
Abstract: A highly reliable display apparatus is provided. In an EL display apparatus including a specific pixel having a function of adding data, a storage node is provided in the pixel, and first data can be held in the storage node. In the pixel, second data is added to the first data through capacitive coupling, whereby third data can be generated. A light-emitting device operates in accordance with the third data. In the pixel, a light-emitting device that requires a high voltage for light emission or a light-emitting device to which application of a high voltage is preferred is provided.
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公开(公告)号：US12272271B2
公开(公告)日：2025-04-08
申请号：US18515655
申请日：2023-11-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shingo Eguchi , Taiki Nonaka , Daiki Nakamura , Nozomu Sugisawa , Kazuhiko Fujita , Shunpei Yamazaki
Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.
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公开(公告)号：US11997859B2
公开(公告)日：2024-05-28
申请号：US17941148
申请日：2022-09-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
IPC: H01L51/50 , H01L27/12 , H10K50/11 , H10K59/121 , H10K59/126 , H10K59/131 , H10K77/10 , H01L29/786
CPC classification number: H10K50/11 , H01L27/12 , H01L27/1225 , H10K59/1213 , H10K59/126 , H10K59/131 , H10K77/111 , H01L27/124 , H01L29/78678 , H01L29/7869
Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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公开(公告)号：US11830391B2
公开(公告)日：2023-11-28
申请号：US17312487
申请日：2019-12-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shingo Eguchi , Taiki Nonaka , Daiki Nakamura , Nozomu Sugisawa , Kazuhiko Fujita , Shunpei Yamazaki
CPC classification number: G09F9/30 , G06F1/1607 , H05K5/0017 , H05K5/0226 , H10K59/12 , H10K77/111
Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.
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Patent Agency Ranking
公开(公告)号：US11557697B2
公开(公告)日：2023-01-17
申请号：US17405547
申请日：2021-08-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada , Satoshi Seo
Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
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公开(公告)号：US11355382B2
公开(公告)日：2022-06-07
申请号：US16850185
申请日：2020-04-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Shingo Eguchi , Kunihiko Suzuki
IPC: H01L21/683 , H01L21/67 , H01L51/00 , H01L29/786 , B32B38/10 , H01L51/50
Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.
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公开(公告)号：US11171298B2
公开(公告)日：2021-11-09
申请号：US16458575
申请日：2019-07-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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公开(公告)号：US11127732B2
公开(公告)日：2021-09-21
申请号：US16028992
申请日：2018-07-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Shingo Eguchi
Abstract: To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
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公开(公告)号：US10442172B2
公开(公告)日：2019-10-15
申请号：US15610890
申请日：2017-06-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo Kumakura , Tomoya Aoyama , Akihiro Chida , Kohei Yokoyama , Masakatsu Ohno , Satoru Idojiri , Hisao Ikeda , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo
IPC: B32B43/00 , G02B6/00 , H01L21/67 , B26D1/04 , H01L51/56 , B32B38/10 , B26D1/00 , H01L27/12 , H01L27/32
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
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