Invention Grant
- Patent Title: Material growth with temperature controlled layer
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Application No.: US15283459Application Date: 2016-10-03
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Publication No.: US10090210B2Publication Date: 2018-10-02
- Inventor: Maxim S. Shatalov , Mikhail Gaevski , Igor Agafonov , Robert M. Kennedy , Alexander Dobrinsky , Michael Shur , Emmanuel Lakios
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01L21/66 ; H01L21/67 ; H01L21/302 ; H01L21/02 ; H01L29/06 ; C23C16/458 ; C23C16/46
Abstract:
A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
Public/Granted literature
- US20170098539A1 Material Growth with Temperature Controlled Layer Public/Granted day:2017-04-06
Information query
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