An electrical device including a substrate structure including a relaxed region of alternating layers of at least a first semiconductor material and a second semiconductor material. A first region of the substrate structure includes a first type conductivity semiconductor device having a first strain over a first portion of the relaxed region. A second region of the substrate structure includes a second type conductivity semiconductor device having a second strain over a second portion of the relaxed region. A third region of the substrate structure including a trench capacitor extending into relaxed region, wherein a width of the trench capacitor defined by the end to end distance of the node dielectric for the trench capacitor alternates between at least two width dimensions as a function of depth measured from the upper surface of the substrate structure.