Invention Grant
- Patent Title: Vertical FET with selective atomic layer deposition gate
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Application No.: US15342585Application Date: 2016-11-03
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Publication No.: US10109491B2Publication Date: 2018-10-23
- Inventor: Kangguo Cheng , Xin Miao , Wenyu Xu , Chen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTENATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTENATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L21/285 ; H01L29/423 ; H01L29/78 ; H01L21/02 ; H01L21/3213
Abstract:
Vertical channel field effect transistors include a bottom source/drain layer. One or more vertical channels are formed on the bottom source/drain layer. A horizontal seed layer is formed around the one or more vertical channels. A metal gate is formed directly on the seed layer. A top source/drain is formed layer above the one or more vertical channels and the metal gate.
Public/Granted literature
- US20170213900A1 VERTICAL FET WITH SELECTIVE ATOMIC LAYER DEPOSITION GATE Public/Granted day:2017-07-27
Information query
IPC分类:
