Invention Grant
- Patent Title: Gate transistor control circuit
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Application No.: US15382650Application Date: 2016-12-17
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Publication No.: US10116304B2Publication Date: 2018-10-30
- Inventor: Dominique Bergogne
- Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Moreno IP Law LLC
- Priority: FR1563354 20151224
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/687 ; H03K19/0175 ; H02M1/08 ; H03K17/14

Abstract:
A device for controlling a first control gate transistor, including: a second transistor and a third transistor series-connected between a first and a second terminals of application of a power supply voltage, the junction point of these transistors being connected to the gate of the first transistor; a terminal of application of a digital control signal; a circuit for generating an analog signal according to variations of the power supply voltage; and for each of the second and third transistors, a circuit of selection of a control signal of the first transistor representative of said digital signal or of said analog signal.
Public/Granted literature
- US20170187373A1 GATE TRANSISTOR CONTROL CIRCUIT Public/Granted day:2017-06-29
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