Invention Grant
- Patent Title: Method for fabricating graphene electrode
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Application No.: US15433612Application Date: 2017-02-15
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Publication No.: US10147948B2Publication Date: 2018-12-04
- Inventor: Hsiao-Feng Huang , Ping-Chen Chen , Chun-Hsiang Wen , Wei-Jen Liu
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Chutung, Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Chutung, Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101143373A 20121121
- Main IPC: H01M4/04
- IPC: H01M4/04 ; H01M4/1393 ; H01M4/583 ; H01M10/0525 ; H01G11/38 ; H01G11/86 ; H01M4/133 ; H01G11/36 ; B05D1/42 ; B05D3/14 ; H01M4/62
Abstract:
A graphene electrode, an energy storage device employing the same, and a method for fabricating the same are provided. The graphene electrode includes a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. Particularly, the hetero-atom doped graphene layer is separated from the metal foil by the non-doped graphene layer.
Public/Granted literature
- US20170162873A1 METHOD FOR FABRICATING GRAPHENE ELECTRODE Public/Granted day:2017-06-08
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