Invention Grant
- Patent Title: Material composition and process for substrate modification
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Application No.: US15380911Application Date: 2016-12-15
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Publication No.: US10163632B2Publication Date: 2018-12-25
- Inventor: Wei-Han Lai , Chien-Wei Wang , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes And Boone, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; H01L21/02 ; G03F7/16 ; G03F7/11 ; G03F7/20

Abstract:
Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.
Public/Granted literature
- US20180174837A1 MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION Public/Granted day:2018-06-21
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