Driving method for power semiconductor switches in H-bridge circuit
Abstract:
A driving method for power semiconductor switches in an H-bridge circuit is provided. The method includes: calculating a start time and an end time of a zero level of an output voltage and determining a zero level section based on the start time and end time of the zero level; and driving an upper power semiconductor switch of a first bridge arm and an upper power semiconductor switch of a second bridge arm to be on simultaneously or driving a lower power semiconductor switch of the first bridge arm and a lower power semiconductor switch of the second bridge arm to be on simultaneously in the zero level section.
Information query
Patent Agency Ranking
0/0