- Patent Title: Driving method for power semiconductor switches in H-bridge circuit
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Application No.: US15891352Application Date: 2018-02-07
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Publication No.: US10164515B2Publication Date: 2018-12-25
- Inventor: Wei Xu , Dingkun Shen , Jianfei Zheng , Jianping Ying , Zhiming Hu , Wei Tian , Wei Xie , Lan Wei
- Applicant: Delta Electronics (Shanghai) Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: Delta Electronics (Shanghai) Co., Ltd.
- Current Assignee: Delta Electronics (Shanghai) Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: CKC & Partners Co., Ltd.
- Priority: CN201710106945 20170227; CN201711224401 20171129
- Main IPC: H02P8/28
- IPC: H02P8/28 ; H03M1/08 ; H02M1/08 ; H02M7/483 ; H02M1/00

Abstract:
A driving method for power semiconductor switches in an H-bridge circuit is provided. The method includes: calculating a start time and an end time of a zero level of an output voltage and determining a zero level section based on the start time and end time of the zero level; and driving an upper power semiconductor switch of a first bridge arm and an upper power semiconductor switch of a second bridge arm to be on simultaneously or driving a lower power semiconductor switch of the first bridge arm and a lower power semiconductor switch of the second bridge arm to be on simultaneously in the zero level section.
Public/Granted literature
- US20180248467A1 DRIVING METHOD FOR POWER SEMICONDUCTOR SWITCHES IN H-BRIDGE CIRCUIT Public/Granted day:2018-08-30
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