Invention Grant
- Patent Title: Bipolar transistor compatible with vertical FET fabrication
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Application No.: US15596376Application Date: 2017-05-16
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Publication No.: US10170463B2Publication Date: 2019-01-01
- Inventor: Brent A. Anderson , Kangguo Cheng , Terence B. Hook , Tak H. Ning
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L27/06 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L29/732 ; H01L21/8249
Abstract:
Methods of forming integrated chips include forming a gate stack around a first semiconductor fin and a second semiconductor fin. The gate stack around the second semiconductor fin is etched away. An extrinsic base is formed around the second semiconductor fin in a region exposed by etching away the gate stack.
Public/Granted literature
- US20180090380A1 BIPOLAR TRANSISTOR COMPATIBLE WITH VERTICAL FET FABRICATION Public/Granted day:2018-03-29
Information query
IPC分类:
