Invention Grant
- Patent Title: Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
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Application No.: US15615768Application Date: 2017-06-06
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Publication No.: US10177003B2Publication Date: 2019-01-08
- Inventor: Zhongkui Tan , Qian Fu , Ying Wu , Qing Xu , Hua Xiang
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/00 ; H01L21/308 ; H01L21/311

Abstract:
A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A bi-modal process gas composition is supplied to a plasma generation region overlying the substrate. For a first period of time, a first radiofrequency power is applied to the bi-modal process gas composition to generate a plasma to cause etching-dominant effects on the substrate. For a second period of time, after completion of the first period of time, a second radiofrequency power is applied to the bi-modal process gas composition to generate the plasma to cause deposition-dominant effects on the substrate. The first and second radiofrequency powers are applied in an alternating and successive manner for an overall period of time to remove a required amount of exposed target material.
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