Invention Grant
- Patent Title: Random data generation circuit, memory storage device and random data generation method
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Application No.: US15487417Application Date: 2017-04-13
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Publication No.: US10193537B2Publication Date: 2019-01-29
- Inventor: Bing-Wei Yi
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW106105738A 20170221
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K3/84 ; H03K5/159 ; H03K5/19 ; G11C7/24 ; G06F7/58 ; G11C7/22 ; H03K19/21 ; G11C27/02

Abstract:
An exemplary embodiment of the disclosure provides a random data generation circuit which includes a phase difference detection circuit and a random data output circuit. The phase difference detection circuit detects a phase difference between a first clock signal and a second clock signal and outputs phase difference information. The random data output circuit is coupled to the phase difference detection circuit and outputs random data according to the phase difference information. Thereby, ideal and unpredictable random data is generated.
Public/Granted literature
- US20180241381A1 RANDOM DATA GENERATION CIRCUIT, MEMORY STORAGE DEVICE AND RANDOM DATA GENERATION METHOD Public/Granted day:2018-08-23
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