Invention Grant
- Patent Title: Die sidewall interconnects for 3D chip assemblies
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Application No.: US15385673Application Date: 2016-12-20
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Publication No.: US10199354B2Publication Date: 2019-02-05
- Inventor: Mitul Modi , Digvijay A. Raorane
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L27/1157 ; H01L27/11524 ; H01L21/78 ; H01L23/00

Abstract:
A stacked-chip assembly including an IC chip or die that is electrically interconnected to another chip and/or a substrate by one or more traces that are coupled through sidewalls of the chip. Electrical traces extending over a sidewall of the chip may contact metal traces of one or more die interconnect levels that intersect the chip edge. Following chip fabrication, singulation may expose a metal trace that intersects the chip sidewall. Following singulation, a conductive sidewall interconnect trace formed over the chip sidewall is to couple the exposed trace to a top or bottom side of a chip or substrate. The sidewall interconnect trace may be further coupled to a ground, signal, or power rail. The sidewall interconnect trace may terminate with a bond pad to which another chip, substrate, or wire lead is bonded. The sidewall interconnect trace may terminate at another sidewall location on the same chip or another chip.
Public/Granted literature
- US20180174999A1 DIE SIDEWALL INTERCONNECTS FOR 3D CHIP ASSEMBLIES Public/Granted day:2018-06-21
Information query
IPC分类: