Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15783823Application Date: 2017-10-13
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Publication No.: US10204986B1Publication Date: 2019-02-12
- Inventor: Rung-Yuan Lee , Chun-Tsen Lu , Kuan-Hung Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: CN201710811002 20170911
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/41 ; H01L29/417 ; H01L23/535 ; H01L21/306 ; H01L29/66 ; H01L21/308 ; H01L29/786 ; H01L21/84 ; H01L27/12
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.
Information query
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