Invention Grant
- Patent Title: Composition and method of forming pattern using composition
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Application No.: US15235471Application Date: 2016-08-12
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Publication No.: US10209619B2Publication Date: 2019-02-19
- Inventor: Hisashi Nakagawa , Ryuichi Saitou , Shunsuke Kurita , Tatsuya Sakai
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-049152 20140312
- Main IPC: H01L21/311
- IPC: H01L21/311 ; G03F7/11 ; G03F7/09 ; H01L21/033

Abstract:
A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted. R—O—O—R′ (1)
Public/Granted literature
- US20160349616A1 SEMICONDUCTOR DEVICE PRODUCTION COMPOSITION AND PATTERN FORMATION METHOD Public/Granted day:2016-12-01
Information query
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