公开(公告)号：US20230069221A1

公开(公告)日：2023-03-02

申请号：US17961611

申请日：2022-10-07

Applicant: JSR CORPORATION

Inventor： Tomoaki SEKO ,  Tatsuya Sakai ,  Kazunori Sakai ,  Yusuke Anno

IPC: G03F7/075 ,  G03F7/20 ,  G03F7/32

Abstract: A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.

公开(公告)号：US09150962B2

公开(公告)日：2015-10-06

申请号：US14159444

申请日：2014-01-21

Applicant: JSR Corporation

Inventor： Tatsuya Sakai ,  Hideki Nishimura ,  Masahiro Yamamoto ,  Hisashi Nakagawa ,  Ryuuichi Saitou ,  Hideyuki Aoki ,  Tsuyoshi Furukawa

IPC: C23C16/06 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  C23C16/18

CPC classification number: C23C16/06 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76877

Abstract: Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium.

Abstract translation: 提供一种用金属体制造衬底的方法。 该方法提供优异的成膜性（反射率和粘合性），易于在大的基板上使用，并且可以以低成本进行。 该方法包括以下步骤：（A）将络合物加热至第一温度以产生复合物的蒸气; 和（B）使蒸气与加热到不高于第一温度的第二温度的基底接触，以形成含有复合体的中心金属的金属体，或者以未组合的形式或作为其化合物（不包括 该复合物）在基材的表面的至少一部分上。 步骤（B）中的第二温度低于络合物的分解温度。 复合体的中心金属是铝或钛。

公开(公告)号：US20220146940A1

公开(公告)日：2022-05-12

申请号：US17584456

申请日：2022-01-26

Applicant: JSR CORPORATION

Inventor： Tatsuya KASAI ,  Tomohiro Matsuki ,  Yusuke Anno ,  Tomoaki Seko ,  Tatsuya Sakai

IPC: G03F7/11 ,  C08G77/50 ,  C08G77/26 ,  C09D183/08 ,  H01L21/027

Abstract: A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R4 represents a hydrogen atom.

公开(公告)号：US10209619B2

公开(公告)日：2019-02-19

申请号：US15235471

申请日：2016-08-12

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Ryuichi Saitou ,  Shunsuke Kurita ,  Tatsuya Sakai

IPC: H01L21/311 ,  G03F7/11 ,  G03F7/09 ,  H01L21/033

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted. R—O—O—R′  (1)

公开(公告)号：US10090163B2

公开(公告)日：2018-10-02

申请号：US14833718

申请日：2015-08-24

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai ,  Shunsuke Kurita ,  Satoshi Dei ,  Kazunori Takanashi ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/308 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  C07F13/00 ,  C07F11/00 ,  C07F9/00 ,  C07F7/28 ,  C07F5/06 ,  C07F5/00

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a β-diketone, a β-keto ester, a β-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n  (1)

公开(公告)号：US20170362412A1

公开(公告)日：2017-12-21

申请号：US15689662

申请日：2017-08-29

Applicant: JSR Corporation

Inventor： Shunsuke Kurita ,  Hisashi Nakagawa ,  Tatsuya Sakai

IPC: C08K5/56 ,  G03F7/40

CPC classification number: C08K5/56 ,  C08L85/00 ,  C09D5/006 ,  C09D185/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysus compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom. R1X1)n  (1)

公开(公告)号：US20160349616A1

公开(公告)日：2016-12-01

申请号：US15235471

申请日：2016-08-12

Applicant: JSR CORPORATION

Inventor： Hisashi NAKAGAWA ,  Ryuichi Saitou ,  Shunsuke Kurita ,  Tatsuya Sakai

IPC: G03F7/11 ,  H01L21/033 ,  G03F7/09

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

Abstract: A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R′ each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted. R—O—O—R′  (1)

公开(公告)号：US20150284539A1

公开(公告)日：2015-10-08

申请号：US14671255

申请日：2015-03-27

Applicant: JSR CORPORATION

Inventor： Shunsuke KURITA ,  Hisashi Nakagawa ,  Tatsuya Sakai

IPC: C08K5/56 ,  G03F7/40

CPC classification number: C08K5/56 ,  C08L85/00 ,  C09D5/006 ,  C09D185/00 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

Abstract translation: 用于成膜的组合物包括水解化合物和溶剂组合物。 水解化合物是包含可水解基团的金属化合物，金属化合物的水解缩合产物，金属化合物与式（1）表示的化合物的缩合产物或其组合的水解产物。 金属化合物包括来自第3,4,5,6,7,8,9,10,11,12或13族的金属元素或其组合。 溶剂组合物包括醇有机溶剂和不包含醇羟基并且包括含有杂原子的基团的非醇有机溶剂。

公开(公告)号：US09080065B2

公开(公告)日：2015-07-14

申请号：US13781800

申请日：2013-03-01

Applicant: JSR CORPORATION

Inventor： Hisashi Nakagawa ,  Tatsuya Sakai

IPC: C09D7/00 ,  C04B35/111 ,  C04B35/581 ,  C04B35/622 ,  C23C18/12 ,  C23C18/14 ,  H01L21/02 ,  C09D7/12

CPC classification number: C09D7/63 ,  C04B35/111 ,  C04B35/581 ,  C04B35/62222 ,  C04B2235/48 ,  C09D7/00 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/1233 ,  C23C18/1241 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/14 ,  H01L21/02178 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02628

Abstract: A composition for forming an aluminum-containing film includes an organic solvent, and an organic aluminum compound. The organic aluminum compound has a structure represented by a general formula (1). In the general formula (1), each of R1 to R6 is independently a hydrogen atom or a hydrocarbon group, each of R1s, R2s, R3s, R4s, R5s and R6s is identical or different, and optionally each of R1s, R2s, R3s, R4s, R5s or R6s is linked to one another.

Abstract translation: 用于形成含铝膜的组合物包括有机溶剂和有机铝化合物。 有机铝化合物具有由通式（1）表示的结构。 在通式（1）中，R 1至R 6各自独立地为氢原子或烃基，R 1，R 2，R 3，R 4，R 5和R 6各自相同或不同，并且R 1，R 2，R 3 ，R4，R5或R6彼此连接。

公开(公告)号：US12098282B2

公开(公告)日：2024-09-24

申请号：US16942938

申请日：2020-07-30

Applicant: JSR CORPORATION

Inventor： Tomoaki Seko ,  Tomoya Taji ,  Nozomi Satou ,  Hiromitsu Tanaka ,  Tatsuya Sakai

IPC: G03F7/075 ,  C08G77/12 ,  C08G77/18 ,  C08G77/48 ,  C08L83/14 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

CPC classification number: C08L83/14 ,  C08G77/12 ,  C08G77/18 ,  C08G77/48 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/325 ,  C08L2203/16

Abstract: A film-forming composition includes a compound including a Si—H bond and an orthoester. The compound preferably includes a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof. In the formula (1-1) and the formula (1-2), R1 and R2 each represent a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and R3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms.