A phase change memory device may include a phase change layer that includes a two-dimensional (2D) material. The phase change layer may include a layered structure that includes one or more layers of 2D material. The phase change layer may be provided between a first electrode and a second electrode, and the phase of at least a portion of one or more of the layers of 2D material may be changed based on an electrical signal applied to the phase change layer through the first electrode and the second electrode. The 2D material may include a chalcogenide-based material or phosphorene. The 2D material may be associated with a phase change temperature that is greater than or equal to about 200° C. and lower than or equal to about 500° C.