Invention Grant
- Patent Title: Airgap spacers
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Application No.: US15342635Application Date: 2016-11-03
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Publication No.: US10217868B2Publication Date: 2019-02-26
- Inventor: Kangguo Cheng , Zuoguang Liu , Chun W. Yeung
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alezanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/49 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/66 ; H01L21/8238 ; H01L27/088 ; H01L21/02 ; H01L21/8234
Abstract:
Semiconductor devices with airgap spacers and methods of forming the same include forming a lower spacer that defines a gate region. A sacrificial upper spacer is formed directly above the lower spacer. A gate stack is formed in the gate region. The sacrificial upper spacer is etched away to form an upper spacer opening. An airgap spacer is formed in the upper spacer opening. The airgap spacer includes a dielectric material that encapsulates an internal void.
Public/Granted literature
- US20170243968A1 AIRGAP SPACERS Public/Granted day:2017-08-24
Information query
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