Invention Grant
- Patent Title: Method of forming a light-emitting device
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Application No.: US15630660Application Date: 2017-06-22
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Publication No.: US10217895B2Publication Date: 2019-02-26
- Inventor: Chih-hao Chen , Yi-Lun Chou , Wei-Chih Peng
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10

Abstract:
The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.
Public/Granted literature
- US20180374985A1 METHOD OF FORMING A LIGHT-EMITTING DEVICE Public/Granted day:2018-12-27
Information query
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