Invention Grant
- Patent Title: Semiconductor devices and methods for forming a semiconductor device
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Application No.: US15602451Application Date: 2017-05-23
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Publication No.: US10224237B2Publication Date: 2019-03-05
- Inventor: Roman Roth , Frank Umbach
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016109713 20160525
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/00
Abstract:
A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.
Public/Granted literature
- US20170345711A1 Semiconductor Devices and Methods for Forming a Semiconductor Device Public/Granted day:2017-11-30
Information query
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