Invention Grant
- Patent Title: Method for manufacturing nonvolatile memory thin film device by using neutral particle beam generation apparatus
-
Application No.: US15517532Application Date: 2015-10-08
-
Publication No.: US10229834B2Publication Date: 2019-03-12
- Inventor: Mun Pyo Hong , Jin Nyeong Jang
- Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Applicant Address: KR Sejong-si
- Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS
- Current Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS
- Current Assignee Address: KR Sejong-si
- Agency: Hauptman Ham, LLP
- Priority: KR10-2014-0136931 20141010
- International Application: PCT/KR2015/010671 WO 20151008
- International Announcement: WO2016/056862 WO 20160414
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/425 ; H05H1/46 ; H01L21/263
Abstract:
The present invention relates to a method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus. The present invention solves the problem that substrates such as glass and a plastic film may not be used for manufacturing the memory thin film device due to the high temperature heat treatment process for a long time, in the existing method for manufacturing the thin film device having the nonvolatile memory function by forming the mobile proton layer.
Public/Granted literature
Information query
IPC分类:
