Invention Grant
- Patent Title: Data writing method, memory control circuit unit and memory storage apparatus
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Application No.: US15060622Application Date: 2016-03-04
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Publication No.: US10235094B2Publication Date: 2019-03-19
- Inventor: Bo-Cheng Ko
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW105100023A 20160104
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a flush command counting (FCC) value, and updating the FCC value whenever receiving a flush command from a host system. The method further includes getting a first physical erasing unit as an active physical unit and determining whether the FCC value is greater than a FCC value threshold. The method further includes setting a writing mode of the active physical unit as a first writing mode if the FCC value is greater than the FCC value threshold, and setting the writing mode of the active physical unit as a second writing mode if the FCC value is not greater than the FCC value threshold.
Public/Granted literature
- US20170192716A1 DATA WRITING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS Public/Granted day:2017-07-06
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