Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
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Application No.: US15412759Application Date: 2017-01-23
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Publication No.: US10236413B2Publication Date: 2019-03-19
- Inventor: Yen-Tai Chao , Sen-Jung Hsu , Tao-Chi Chang , Wei-Chih Wen , Ou Chen , Chun-Hsiang Tu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/00 ; H01L33/12 ; H01L33/20 ; H01L33/10 ; H01L33/16

Abstract:
A light-emitting device including a substrate having a top surface, a side surface and a roughed surface between the top surface and the side surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the second portion and exposes the first portion; a second semiconductor stack including a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle α between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof; and wherein the roughed surface is connected to the top surface.
Public/Granted literature
- US20170179341A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-06-22
Information query
IPC分类: