Invention Grant
- Patent Title: Forming horizontal bipolar junction transistor compatible with nanosheets
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Application No.: US15933768Application Date: 2018-03-23
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Publication No.: US10269790B2Publication Date: 2019-04-23
- Inventor: Kangguo Cheng , Juntao Li , Geng Wang , Qintao Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8249 ; H01L29/06 ; H01L27/07 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; B82Y10/00 ; H01L29/735 ; H01L29/10 ; H01L29/165 ; H01L29/775 ; H01L29/73
Abstract:
A semiconductor device includes a substrate and a field effect transistor (FET) arranged on the substrate. The FET includes a gate positioned on the substrate. The gate includes a nanosheet extending through a channel region of the gate. The FET includes a pair of source/drains arranged on opposing sides of the gate. The semiconductor device further includes a bipolar junction transistor (BJT) arranged adjacent to the FET on the substrate. The BJT includes an emitter and a collector. The BJT includes a nanosheet including a semiconductor material extending from the emitter to the collector, with a doped semiconductor material arranged above and below the nanosheet.
Public/Granted literature
- US20180261593A1 FORMING HORIZONTAL BIPOLAR JUNCTION TRANSISTOR COMPATIBLE WITH NANOSHEETS Public/Granted day:2018-09-13
Information query
IPC分类:
