Invention Grant
- Patent Title: Integrated strained stacked nanosheet FET
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Application No.: US15835526Application Date: 2017-12-08
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Publication No.: US10283625B2Publication Date: 2019-05-07
- Inventor: Kangguo Cheng , Ramachandra Divakaruni , Juntao Li , Xin Miao
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/8238 ; H01L21/84 ; H01L21/8234 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L21/02
Abstract:
Transistors include stress liners, with one or more semiconductor structures between the stress liners. The stress liners provide a stress on the one or more semiconductor structures. A gate is formed over and around the one or more semiconductor structures. A source and drain region is formed on the one or more semiconductor structures on opposite sides of the gate, between the stress liners.
Public/Granted literature
- US20180108751A1 Integrated strained stacked nanosheet FET Public/Granted day:2018-04-19
Information query
IPC分类:
