Invention Grant
- Patent Title: EUV source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus
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Application No.: US15961399Application Date: 2018-04-24
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Publication No.: US10295916B2Publication Date: 2019-05-21
- Inventor: Heine Melle Mulder , Andrey Sergeevich Tychkov , Willem Van Schaik
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Arent Fox LLP
- Priority: EP15195362 20151119; EP15199803 20151214
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G21K1/06 ; H05G2/00
Abstract:
Disclosed is a radiation source module and a radiation collector for the module with the radiation collector comprising a substrate coated with at least one reflective layer and a plurality of perforations within the reflective layer, with the plurality of holes forming vertices of a grid substantially covering the surface, and wherein the coating may comprise multiple layers.
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