Invention Grant
- Patent Title: Stress relieving semiconductor layer
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Application No.: US15496887Application Date: 2017-04-25
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Publication No.: US10297460B2Publication Date: 2019-05-21
- Inventor: Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L21/308 ; H01L29/66 ; H01L21/02 ; H01L33/12 ; H01L29/20 ; H01L33/00
Abstract:
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
Public/Granted literature
- US20170229611A1 Stress Relieving Semiconductor Layer Public/Granted day:2017-08-10
Information query
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