Invention Grant
- Patent Title: Memory control circuit and memory test method
-
Application No.: US15598077Application Date: 2017-05-17
-
Publication No.: US10311964B2Publication Date: 2019-06-04
- Inventor: Kuan-Te Wu , Jenn-Shiang Lai , Chih-Yen Lo , Jin-Fu Li
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Chutung, Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Chutung, Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW105143402A 20161227
- Main IPC: G11C29/24
- IPC: G11C29/24 ; G11C29/36 ; G06F13/00 ; G11C29/14 ; G11C29/16

Abstract:
A memory control circuit, coupled to a multi-channel memory, includes a plurality of channel controllers coupled to respective channel memories of the multi-channel memory, and a built-in self-test (BIST) circuit. The BIST circuit includes a BIST controller and a plurality of command index registers which store respective command indexes related to the channel controllers. The BIST controller receives notification from at least two channel controllers of the channel controllers, which indicates that the at least two channel controllers complete respective current test commands. When the BIST controller arbitrates, the BIST controller selects at least a channel controller from the at least two channel controllers which send the notification, and sends respective next test command(s) to the selected at least one channel controller based on the respective command index(es) of the selected at least one channel controller.
Public/Granted literature
- US20180182466A1 MEMORY CONTROL CIRCUIT AND MEMORY TEST METHOD Public/Granted day:2018-06-28
Information query