Invention Grant
- Patent Title: Sacrificial mandrel structure with oxide pillars having different widths and resulting fins arrangements
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Application No.: US15482245Application Date: 2017-04-07
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Publication No.: US10312104B2Publication Date: 2019-06-04
- Inventor: Kangguo Cheng
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/12 ; H01L29/78 ; H01L27/092 ; H01L21/308 ; H01L21/033 ; H01L21/311 ; H01L21/8234 ; H01L21/3065 ; H01L21/321 ; H01L29/786 ; H01L21/8238 ; H01L27/11
Abstract:
A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to form a plurality of oxide pillars, removing the one or more sacrificial mandrels, forming spacers on opposite sides of each of the plurality of oxide pillars to produce a spacer pattern, removing the plurality of oxide pillars, and transferring the spacer pattern to the substrate to produce a plurality of fins.
Public/Granted literature
- US20170278870A1 FABRICATION OF FINS USING VARIABLE SPACERS Public/Granted day:2017-09-28
Information query
IPC分类:
