Invention Grant
- Patent Title: Semiconductor device and power conversion device
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Application No.: US15814213Application Date: 2017-11-15
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Publication No.: US10312850B2Publication Date: 2019-06-04
- Inventor: Masashi Tsubota
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2016-255581 20161228
- Main IPC: H02P27/08
- IPC: H02P27/08 ; H02M1/42 ; H02P29/40 ; H02M1/08 ; H02M3/158 ; H02P29/50 ; H02P6/08 ; H02M7/5395 ; H02P27/10 ; H02M1/00

Abstract:
To solve the problem of multi-pulse control in which the load of the control software is increased and further switching/timing adjustment is required, a semiconductor device includes a control unit including a CPU and a memory, a PWM output circuit for controlling the driver IC to drive the power semiconductor device, a current detection circuit for detecting the motor current, and an angle detection circuit for detecting the angle of the motor. The PWM output circuit includes a square wave generator circuit to generate a square wave based on the angle of the angle detection circuit as well as the base square wave information.
Public/Granted literature
- US20180183378A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2018-06-28
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