Invention Grant
- Patent Title: Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
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Application No.: US15590863Application Date: 2017-05-09
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Publication No.: US10319426B2Publication Date: 2019-06-11
- Inventor: Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11507 ; H01L27/11509 ; H01L49/02
Abstract:
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.
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